2026-04-29T23:03:55Zhttps://repisalud.isciii.es/rest/oai/request
oai:repisalud.isciii.es:20.500.12105/235252024-11-29T05:33:21Zcom_20.500.12105_15322com_20.500.12105_2051col_20.500.12105_16967
Repisalud author Torrens, Gabriel author Alheyasat, Abdel author Alorda, Bartomeu author Bota, Sebastia A 2024-10-04T13:57:56Z 2024-10-04T13:57:56Z 2022-01 Torrens G, Alheyasat A, Alorda B, Bota SA. SRAM-Based PUF Reliability Prediction Using Cell-Imbalance Characterization in the State Space Diagram. Electronics. 2022 Jan;11(1):135. 10.3390/electronics11010135 2079-9292 Electronics https://hdl.handle.net/20.500.13003/19829 2-s2.0-85122039092 https://hdl.handle.net/20.500.12105/23525 741296000001 This work proposes a methodology to estimate the statistical distribution of the probability that a 6T bit-cell starts up to a given logic value in SRAM memories for PUF applications. First, the distribution is obtained experimentally in a 65-nm CMOS device. As this distribution cannot be reproduced by electrical simulation, we explore the use of an alternative parameter defined as the distance between the origin and the separatrix in the bit-cell state space to quantify the mismatch of the cell. The resulting distribution of this parameter obtained from Monte Carlo simulations is then related to the start-up probability distribution using a two-component logistic function. The reported results show that the proposed imbalance factor is a good predictor for PUF-related reliability estimation with the advantage that can be applied at the early design stages. eng SRAM Memory PUF Cell mismatch SRAM-PUF SRAM-Based PUF Reliability Prediction Using Cell-Imbalance Characterization in the State Space Diagram research article