2026-07-21T15:46:28Zhttps://repisalud.isciii.es/rest/oai/requestoai:repisalud.isciii.es:20.500.12105/228022024-11-29T02:51:58Zcom_20.500.12105_15322com_20.500.12105_2051col_20.500.12105_16967
Repisalud
author
Ghosh, Kousik
author
Sil, Sayantan
author
Ray, Partha Pratim
author
Ortega-Castro, Joaquin
author
Frontera, Antonio
author
Chattopadhyay, Shouvik
2024-09-10T13:10:31Z
2024-09-10T13:10:31Z
2019-10-30
Ghosh K, Sil S, Ray PP, Ortega-Castro J, Frontera A, Chattopadhyay S. Photosensitive Schottky barrier diode behavior of a semiconducting Co(III)-Na complex with a compartmental Schiff base ligand. RSC Adv. 2019 Oct 30;9(60):34710-9.
10.1039/c9ra06354d
2046-2069
RSC Advances
http://hdl.handle.net/20.500.13003/9652
35530669
2-s2.0-85074717479
https://hdl.handle.net/20.500.12105/22802
498844000004
The opto-electronic properties of an X-ray characterized, end-to-end azide bridged cobalt(III)-sodium complex, [(N-3)CoLNa(N-3)](n), have been investigated in detail. The complex is found to be a direct semiconductor material as confirmed by determining the band gap of this complex by experimental as well as theoretical studies. The complex has also been used to construct a photosensitive Schottky device. Optical conductivity, calculated from the DFT study, has been used to analyze how the conductivity of the material changes upon illumination. The electrical conductivity and concomitantly, the photoconductivity of the material increase as a consequence of photon absorption.
eng
Photosensitive Schottky barrier diode behavior of a semiconducting Co(III)-Na complex with a compartmental Schiff base ligand
research article