2026-06-14T03:53:13Zhttps://repisalud.isciii.es/rest/oai/requestoai:repisalud.isciii.es:20.500.12105/225782024-11-28T22:55:16Zcom_20.500.12105_15322com_20.500.12105_2051col_20.500.12105_16967
Repisalud
author
Perello-Roig, Rafel
author
Verd, Jaume
author
Bota, Sebastia
author
Segura, Jaume
2024-09-06T09:55:58Z
2024-09-06T09:55:58Z
2018-09
Perello Roig R, Verd J, Bota Sebastiá A, Segura Fuster J. Thermomechanical Noise Characterization in Fully Monolithic CMOS-MEMS Resonators. Sensors. 2018 Sep;18(9):3124.
10.3390/s18093124
1424-8220
Sensors
http://hdl.handle.net/20.500.13003/9149
30223610
L624341548
2-s2.0-85053665284
https://hdl.handle.net/20.500.12105/22578
446940600383
We analyzed experimentally the noise characteristics of fully integrated CMOS-MEMS resonators to determine the overall thermomechanical noise and its impact on the limit of detection at the system level. Measurements from four MEMS resonator geometries designed for ultrasensitive detection operating between 2-MHz and 8-MHz monolithically integrated with a low-noise CMOS capacitive readout circuit were analyzed and used to determine the resolution achieved in terms of displacement and capacitance variation. The CMOS-MEMS system provides unprecedented detection resolution of 11 yF.Hz(-1/2) equivalent to a minimum detectable displacement (MDD) of 13 fm.Hz(-1/2), enabling noise characterization that is experimentally demonstrated by thermomechanical noise detection and compared to theoretical model values.
eng
MEMS resonators
Thermomechanical noise
Sensors
CMOS-MEMS
Thermomechanical Noise Characterization in Fully Monolithic CMOS-MEMS Resonators
research article