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oai:repisalud.isciii.es:20.500.12105/225782024-11-28T22:55:16Zcom_20.500.12105_15322com_20.500.12105_2051col_20.500.12105_16967

00925njm 22002777a 4500 dc Perello-Roig, Rafel author Verd, Jaume author Bota, Sebastia author Segura, Jaume author 2018-09 We analyzed experimentally the noise characteristics of fully integrated CMOS-MEMS resonators to determine the overall thermomechanical noise and its impact on the limit of detection at the system level. Measurements from four MEMS resonator geometries designed for ultrasensitive detection operating between 2-MHz and 8-MHz monolithically integrated with a low-noise CMOS capacitive readout circuit were analyzed and used to determine the resolution achieved in terms of displacement and capacitance variation. The CMOS-MEMS system provides unprecedented detection resolution of 11 yF.Hz(-1/2) equivalent to a minimum detectable displacement (MDD) of 13 fm.Hz(-1/2), enabling noise characterization that is experimentally demonstrated by thermomechanical noise detection and compared to theoretical model values. Perello Roig R, Verd J, Bota Sebastiá A, Segura Fuster J. Thermomechanical Noise Characterization in Fully Monolithic CMOS-MEMS Resonators. Sensors. 2018 Sep;18(9):3124. 10.3390/s18093124 1424-8220 Sensors http://hdl.handle.net/20.500.13003/9149 30223610 L624341548 2-s2.0-85053665284 https://hdl.handle.net/20.500.12105/22578 446940600383 MEMS resonators Thermomechanical noise Sensors CMOS-MEMS Thermomechanical Noise Characterization in Fully Monolithic CMOS-MEMS Resonators